comset semiconductors 1/5 bd643/645/647/649/651 absolute maximum ratings symbol ratings value unit BD644 60 bd646 80 bd648 100 bd650 120 v cbo collector-base voltage bd652 140 v BD644 45 bd646 60 bd648 80 bd650 100 v ceo collector-emittervoltage bd652 120 v i c collector current BD644 bd646 bd648 bd650 bd652 8 a i cm collector peak current BD644 bd646 bd648 bd650 bd652 12 a silicon npn daelington power transistors npn epitaxial-base transistors in a monolithic darlington circuit and housed in a to-220 enveloppe. they are intended for output stages in audio equipment, general amplifiers, and analogue switching application. pnp complements are BD644, bd646, bd648, bd650 and bd652
comset semiconductors 2/5 bd643/645/647/649/651 symbol ratings value unit i b base current BD644 bd646 bd648 bd650 bd652 150 ma p t power dissipation @ t mb < 25 BD644 bd646 bd648 bd650 bd652 62.5 watts t j t s junction storage temperature BD644 bd646 bd648 bd650 bd652 150 -65 to +150 c limiting values in accordance with the absolute maximum system (iec 134) thermal characteristics symbol ratings value unit r thj-mb from junction to mounting base BD644 bd646 bd648 bd650 bd652 2k/w r thj-a from junction to ambient in free air BD644 bd646 bd648 bd650 bd652 70 k/w
comset semiconductors 3/5 bd643/645/647/649/651 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ mx unit i e =0,v cb =v ceo max BD644 bd646 bd648 bd650 bd652 --0.1ma i cbo collector cutoff current i e =0,v cb =1/2 v cbo max, t j =150c BD644 bd646 bd648 bd650 bd652 --1ma i ceo collector cutoff current i e =0, v ce =1/2 v ceo max BD644 bd646 bd648 bd650 bd652 --0.2ma i ebo emitter cutoff current v eb =5 v, i c =0 BD644 bd646 bd648 bd650 bd652 --5.0ma BD644 --2 bd646 --- bd648 --- bd650 --- i c =4 a, i b =16 ma bd652 --- BD644 --- bd646 --2 bd648 --2 bd650 --2 i c =3 a, i b =12 ma bd652 --2 BD644 --2.5 bd646 --2.5 bd648 --2.5 bd650 --2.5 v ce(sat) collector-emitter saturation voltage (*) i c =5 a, i b =50 ma bd652 --2.5 v v be(sat) base-emitter saturation voltage (*) i c =12 a, i b =120 ma BD644 bd646 bd648 bd650 bd652 --3v
comset semiconductors 4/5 bd643/645/647/649/651 symbol ratings value unit BD644 --2.5 bd646 --- bd648 --- bd650 --- i c =4 a, v ce =3 v bd652 --- BD644 --- bd646 --2.5 bd648 --2.5 bd650 --2.5 v be base-emitter voltage (*) i c =3 a, v ce =3 v bd652 --2.5 v BD644 - - bd646 - - bd648 - - bd650 - - v ce =3.0 v, i c =0.5 a bd652 - 1900 - BD644 750 -- bd646 - -- bd648 - -- bd650 - -- v ce =3.0 v, i c =4 a bd652 - -- BD644 - -- bd646 -- bd648 -- bd650 -- v ce =3.0 v, i c =3 a bd652 750 -- BD644 - - bd646 - - bd648 - - bd650 - - h fe dc current gain (*) v ce =3.0 v, i c =8 a bd652 - 1800 - - BD644 10 -- bd646 - -- bd648 - -- bd650 - -- v ce =3.0 v, i c =4 a, f=1mhz bd652 - -- BD644 - -- bd646 10 -- bd648 10 -- bd650 10 -- h fe small signal current gain v ce =3.0 v, i c =3 a, f=1mhz bd652 10 -- (*) pulse width 300 s, duty cycle 2.0%
comset semiconductors 5/5 bd643/645/647/649/651 mechanical data case to-220 dimensions mm inches a 9,86 0,39 b 15,73 0,62 c 13,37 0,52 d 6,67 0,26 e 4,44 0,17 f 4,21 0,16 g 2,99 0,11 h 17,21 0,68 l 1,29 0,05 m 3,6 0,14 n 1,36 0,05 p 0,46 0,02 r 2,1 0,08 s 5 0,19 t 2,52 0,098 u 0,79 0,03 pin 1 : anode 1 pin 2 : anode 2 pin 3 : gate
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